FDMC8622 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Shielded Gate MOSFET Technology
* Max rDS(on) = 56 mW at VGS = 10 V, ID = 4 A
* Max rDS(on) = 90 mW at VGS = 6 V, ID = 3 A
* High Performance Trench Tec.

Description

This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Features
* Shielded Gate MOSFET Technolog.

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